类别是'category.MOSFETs 晶体管阵列' (10000)
- 所有品牌
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NTUD3127CT5G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | SOT-963 | 6 | SILICON | 160mA 140mA | 2 | 112 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Nickel/Gold/Palladium (Ni/Au/Pd) | 125mW | FLAT | 260 | 40 | 6 | 不合格 | Dual | 增强型MOSFET | 125mW | N and P-Channel | SWITCHING | 3 Ω @ 100mA, 4.5V | 1V @ 250μA | 9pF @ 15V | 37ns | N-CHANNEL AND P-CHANNEL | 97 ns | 140mA | 8V | 3Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.2 pF | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
NTND31225CZTAG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 6-XFLGA | YES | SILICON | 220mA Ta 127mA Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | Automotive, AEC-Q101 | e4 | yes | 活跃 | 1 (Unlimited) | 6 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 无铅 | 未说明 | 未说明 | R-PBCC-N6 | 2 | 增强型MOSFET | 125mW | 125mW Ta | N and P-Channel Complementary | SWITCHING | 1.5 Ω @ 100mA, 4.5V, 5 Ω @ 100mA, 4.5V | 1V @ 250μA | 12.3pF @ 15V 12.8pF @ 15V | 20V | N-CHANNEL AND P-CHANNEL | 8V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 440μm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF5850TR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 6-TSOP | 2.2A | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | -20V | 960mW | -2.2A | 960mW | 2 P-Channel (Dual) | 135mOhm @ 2.2A, 4.5V | 1.2V @ 250μA | 320pF @ 15V | 5.4nC @ 4.5V | 14ns | 20V | 2.2A | -20V | 320pF | 逻辑电平门 | 135 mΩ | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAS300M17BM2 | Cree/Wolfspeed | 数据表 | 560 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 19 Weeks | 底座安装 | Module | 7 | Module | 325A Tc | -40°C~150°C TJ | Tray | 2014 | Z-Rec® | 活跃 | 1 (Unlimited) | 150°C | 1.76kW | 1760W | 2 N-Channel (Half Bridge) | 10mOhm @ 225A, 20V | 2.3V @ 15mA (Typ) | 20000pF @ 1000V | 1076nC @ 20V | 1700V 1.7kV | 300A | 2.3V | Silicon Carbide (SiC) | 8mOhm | 30mm | 106.4mm | 61.4mm | Unknown | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLLD4951NFTWG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-PowerWDFN | 5.5A 6.3A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 810mW | 增强型MOSFET | 800mW 810mW | 2 N-Channel (Dual) Asymmetrical | 17.4m Ω @ 9A, 10V | 2.2V @ 250μA | 605pF @ 15V | 12nC @ 10V | 30V | 6.3A | 13A | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3704-CB11 | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | onsemi | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8J1TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 80 ns | 150°C TJ | Tape & Reel (TR) | 2003 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | -30V | 2W | 鸥翼 | 260 | -5A | 10 | *J1 | 8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 15 ns | 2 P-Channel (Dual) | SWITCHING | 42m Ω @ 5A, 10V | 2.5V @ 1mA | 1400pF @ 10V | 16nC @ 5V | 30ns | 30V | 40 ns | 5A | 20V | 5A | 0.042Ohm | 20A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSD235N L6327 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | YES | SILICON | 2 | 950mA | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | e3 | Obsolete | 1 (Unlimited) | 6 | EAR99 | 哑光锡 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | 鸥翼 | 260 | compliant | 40 | BSD235 | 6 | R-PDSO-G6 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 N-Channel (Dual) | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 63pF @ 10V | 0.32nC @ 4.5V | 20V | 0.95A | 0.35Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 0.5W | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
NTMFD4C20NT3G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 9.1A 13.7A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 1.15W | 8 | 1.09W 1.15W | 2 N-Channel (Dual) | 7.3m Ω @ 10A, 10V | 2.1V @ 250μA | 无卤素 | 970pF @ 15V | 9.3nC @ 4.5V | 30V | 13.7A | 20V | Standard | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QH8KA1TCR | ROHM Semiconductor | 数据表 | 2270 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 8-SMD, Flat Lead | YES | SILICON | 2 | 4.5A | 150°C TJ | Cut Tape (CT) | 2015 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 未说明 | not_compliant | 未说明 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.4W | 2 N-Channel (Dual) | SWITCHING | 73m Ω @ 4.5A, 10V | 2.5V @ 1mA | 125pf @ 15V | 3nC @ 10V | 30V | 0.073Ohm | 12A | 30V | 0.65 mJ | METAL-OXIDE SEMICONDUCTOR | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS8DNH3LL | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 23 ns | 150°C TJ | Tape & Reel (TR) | STripFET™ III | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 22mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 30V | 2W | 鸥翼 | 260 | 8A | 30 | STS8DN | 8 | 不合格 | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 22m Ω @ 4A, 10V | 1V @ 250μA | 857pF @ 25V | 10nC @ 4.5V | 14.5ns | 8 ns | 8A | 16V | 8A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTMFD4C87NT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 24 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 11.7A 14.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | Obsolete | 1 (Unlimited) | Tin (Sn) | 1.1W | 2 N-Channel (Dual) Asymmetrical | 5.4m Ω @ 30A, 10V | 2.2V @ 250μA | 1252pF @ 15V | 22.2nC @ 10V | 30V | 14.9A | 26.6A | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMN2AMCTA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | SILICON | 3.7A Ta | 2 | 1.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 1.7W | 260 | 40 | 8 | 增强型MOSFET | 2.45W | DRAIN | 2.3 ns | 2 N-Channel (Dual) | SWITCHING | 120m Ω @ 4A, 4.5V | 3V @ 250μA | 299pF @ 15V | 3.1nC @ 4.5V | 2.6ns | 1.3 ns | 3.7A | 12V | 20V | 13A | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | NTQD6866R2 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | SILICON | 2 | 40 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | 20V | 940mW | 鸥翼 | 240 | not_compliant | 6.9A | 30 | 8 | 不合格 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 32m Ω @ 6.9A, 4.5V | 1.2V @ 250μA | 1400pF @ 16V | 22nC @ 4.5V | 45ns | 90 ns | 4.7A | 12V | 0.032Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 175 pF | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
FDMD85100 | ON Semiconductor | 数据表 | 350000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 94.85095mg | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 2.2W | 260 | not_compliant | 未说明 | 2.2W | 2 N-Channel (Half Bridge) | 9.9m Ω @ 10.4A, 10V | 4V @ 250μA | 2230pF @ 50V | 31nC @ 10V | 100V | 10.4A | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SH8K25GZ0TB | ROHM Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 5.2A Ta | 2 | 150°C TJ | Cut Tape (CT) | 活跃 | 1 (Unlimited) | 8 | 鸥翼 | 未说明 | 未说明 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W Ta | 2 N-Channel (Dual) | SWITCHING | 85m Ω @ 5.2A, 10V | 2.5V @ 1mA | 100pF @ 10V | 1.7nC @ 5V | 40V | 0.085Ohm | 8A | 40V | 0.48 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP1046UFDB-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | Gold | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | 6 | SILICON | 2 | 27.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.4W | 无铅 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 5.7 ns | 2 P-Channel (Dual) | SWITCHING | 61m Ω @ 3.6A, 4.5V | 1V @ 250μA | 915pF @ 6V | 17.9nC @ 8V | 11.5ns | 12V | 26.4 ns | 3.8A | 8V | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK3744-TL-E | Sanyo | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Sanyo | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS5AS-06-T13#B21 | Renesas Electronics America Inc | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Renesas Electronics America Inc | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB95XNE2X | Nexperia USA Inc. | 数据表 | 357000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | YES | SILICON | 2.7A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 6 | 无铅 | 未说明 | 未说明 | 6 | IEC-60134 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 510mW Ta | 2 N-Channel (Dual) | SWITCHING | 99m Ω @ 2.8A, 4.5V | 1.25V @ 250μA | 258pF @ 15V | 4.5nC @ 4.5V | 30V | 2.7A | 0.099Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N37FE,LM | Toshiba Semiconductor and Storage | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 150°C TJ | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | 150mW | 150mW | 2 N-Channel (Dual) | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 12pF @ 10V | 20V | 250mA | 10V | 20V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON5802BL | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-VFDFN Exposed Pad | YES | 7.2A Tc | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Obsolete | 1 (Unlimited) | 增强型MOSFET | 1.6W | 2 N-Channel (Dual) Common Drain | 19m Ω @ 7A, 4.5V | 1.5V @ 250μA | 1150pF @ 15V | 24nC @ 10V | 30V | 7.2A | METAL-OXIDE SEMICONDUCTOR | 1.6W | Standard | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MAX8791AGTA | Analog Devices Inc./Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Analog Devices Inc./Maxim Integrated | 活跃 | Non-Compliant | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK1736-AZ | Sanyo | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Sanyo | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MAX8783GTC | Analog Devices Inc./Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Analog Devices Inc./Maxim Integrated | 活跃 | * |
NTUD3127CT5G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTND31225CZTAG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRF5850TR
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
CAS300M17BM2
Cree/Wolfspeed
分类:Transistors - FETs, MOSFETs - Arrays
6,247.856974
NTLLD4951NFTWG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
2SK3704-CB11
onsemi
分类:Transistors - FETs, MOSFETs - Arrays
SP8J1TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
BSD235N L6327
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
NTMFD4C20NT3G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
QH8KA1TCR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
STS8DNH3LL
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
NTMFD4C87NT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
ZXMN2AMCTA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
NTQD6866R2
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDMD85100
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SH8K25GZ0TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMP1046UFDB-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2SK3744-TL-E
Sanyo
分类:Transistors - FETs, MOSFETs - Arrays
FS5AS-06-T13#B21
Renesas Electronics America Inc
分类:Transistors - FETs, MOSFETs - Arrays
PMDPB95XNE2X
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
5.344513
SSM6N37FE,LM
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
1.867761
AON5802BL
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
MAX8791AGTA
Analog Devices Inc./Maxim Integrated
分类:Transistors - FETs, MOSFETs - Arrays
2SK1736-AZ
Sanyo
分类:Transistors - FETs, MOSFETs - Arrays
MAX8783GTC
Analog Devices Inc./Maxim Integrated
分类:Transistors - FETs, MOSFETs - Arrays
